Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies.

High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitrogen-vacancy color centers NV– in a 28Si-enriched (nuclear spin ) 6H-28SiC crystal have been studied using the photoinduced ( = 980 nm) high-frequency (94 GHz, 3.4 T) pulsed electron paramagnetic resonance method at a temperature of K. Three structurally nonequivalent types of NV– centers with axial symmetry have been identified and their spectroscopic parameters have been determined. Long spin–lattice, ms, and spin–spin, μs, ensemble relaxation times of NV– centers with extremely narrow (450 kHz) absorption lines allow highly selective excitation of resonant transitions between sublevels caused by the weak hyperfine interaction MHz) with 14N nuclei for the quantum manipulation of the electron spin magnetization. [ABSTRACT FROM AUTHOR]