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SiC superjunction MOSFET with Schottky diode for improving short-circuit and reverse recovery ruggedness.
- Source :
-
Micro & Nanostructures . Jul2024, Vol. 191, pN.PAG-N.PAG. 1p. - Publication Year :
- 2024
-
Abstract
- In this article, a novel SiC superjunction MOSFET with Schottky diode containing N- and P-type barrier is proposed to improving short-circuit and reverse recovery ruggedness, investigated by TCAD simulations. The adoption of superjunction and p-shields structure can reduce saturation current, and thus, improve short-circuit capability. A fine gate oxide providing long-term reliability of the device is obtained. Also, N-type Schottky diode for electrons is used to dampen bipolar conduction of the parasitic body diode, while P-type Schottky diode for holes is introduced to constrain the hole inflow and extraction attributed to the transient variation of the superjunction. As a result, compared with an SBD-wall-integrated trench MOSFET (SWITCH-MOS), a low on-resistance and high breakdown voltage of the proposed structure are gained. More importantly, the proposed device exhibits stronger temperature-dependent immunity. As expected, simulation results indicate that the proposed device under 10 nH stray inductance shows a 30%–50 % reduction in the peak reverse recovery current and a 50%–70 % decrease in the current rising slope of reverse recovery, compared to only a single superjunction, when the metal workfunction varies from 5.1 to 5.6 eV. Moreover, the short-circuit withstanding time of the proposed structure increases roughly 2 times longer than that of SWITCH-MOS. • Dual-type Schottky diodes. • Improving short-circuit capability. • Good reverse recovery robustness. • A good tradeoff between breakdown voltage and specific on-resistance. [ABSTRACT FROM AUTHOR]
- Subjects :
- *SCHOTTKY barrier diodes
*BREAKDOWN voltage
*HIGH voltages
Subjects
Details
- Language :
- English
- ISSN :
- 27730131
- Volume :
- 191
- Database :
- Academic Search Index
- Journal :
- Micro & Nanostructures
- Publication Type :
- Academic Journal
- Accession number :
- 177651814
- Full Text :
- https://doi.org/10.1016/j.micrna.2024.207847