3D full hydrodynamic model for semiconductor optoelectronic devices: Stability of thermal equilibrium states.

In this paper, we study a three-dimensional full hydrodynamic model in a bounded domain with insulating and adiabatic boundary. The model takes the form of nonisentropic Euler-Poisson system and incorporates recombination/generation terms, describing the bipolar transport of hot carriers in semiconductor optoelectronic devices. Of particular concern are the existence, uniqueness and exponential stability of thermal equilibrium states to the model, since these mathematical results are rendered useful in numerical simulation and physical theory of semiconductors. They are rigorously proved by the perturbation argument and energy method. [ABSTRACT FROM AUTHOR]