Photoemission enhancement on In0.5Ga0.5N photocathode with nanocone emission surface.

• 1. The photoemission model of field-assisted NEA surface InGaN nanocones array photocathode is constructed in this work. • 2. The maximum collection efficiency of the nanocone photocathode is 42.61%, which is 120% higher than that of the nanowires with normal incidence and no electric field. • 3. This work proves that proper design of the nanocone structure can achieve higher photocurrent than the nanopillar photocathode. High-quality electron beam require high-quantum efficiency and high-lifetime photocathodes. A photoemission model of negative electron affinity (NEA) In 0.5 Ga 0.5 N nanocone array photocathode was established for performance evaluation. The finite element and finite difference methods jointly simulated the photocathode. The results show that the practical design of nanocones and the joint action of oblique light and additional electric field can effectively improve the photoelectric conversion efficiency of the In 0.5 Ga 0.5 N nanocone array photocathode. The collection efficiency of nanocones with H = 800 nm, T = 170 nm, β = 25°, and E out = 2 V/μm can be boosted by 144 % and 120 %, respectively, contrasted with the nanocones and nanopillars with normal incidence and without an additional electric field. [ABSTRACT FROM AUTHOR]