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Facile synthesis of Cu-Sn nanoparticle film and its bonding mechanism for power electronic packaging.

Authors :
Hu, Huan
Jia, Qiang
Wang, Yishu
Zhou, Bolong
Zhang, Hongqiang
Zhang, Mingan
Ma, Limin
Zou, Guisheng
Guo, Fu
Source :
Journal of Materials Processing Technology. Aug2024, Vol. 329, pN.PAG-N.PAG. 1p.
Publication Year :
2024

Abstract

The Cu-Sn full intermetallic compound is a promising high-temperature electronic packaging material, while its preparation is usually time-consuming. In this work, a novel dual-beam laser co-deposition method was proposed to prepare Cu-Sn nanoparticle film for power electronic packaging with high bonding efficiency. Various Cu-Sn contents were prepared to reveal the bonding mechanism of the full intermetallic compound structure. The results show that joints with a Cu content ranging from 20 wt% to 80 wt% could form full intermetallic compounds within 2 min with the shear strength reaching 120 MPa. Specifically, Cu 6 Sn 5 , 'island-like' Cu 3 Sn, and sintered Cu generated successively in the bondline center with the increasing Cu content. All failures occurred within the bondline indicating a higher interface bonding quality, while the 'island-like' Cu 3 Sn enhanced the shear strength. This die attach process is compatible with current commercial SiC die attach process with lower material cost as well as high efficiency, enabling the Cu-Sn nanoparticle film to be a promising material for high-reliability power electronic packaging. [Display omitted] • Cu-Sn nanoparticle films were prepared by dual-beam laser co-deposition method. • The as-deposited film consisted of Cu, Sn, Cu-Sn nanoalloy, Cu 6 Sn 5 and Cu 3 Sn. • The full IMC joints can be prepared at 280 0C within 2 min. • The shear strength of the full IMC joint reached 120 MPa. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09240136
Volume :
329
Database :
Academic Search Index
Journal :
Journal of Materials Processing Technology
Publication Type :
Academic Journal
Accession number :
177869638
Full Text :
https://doi.org/10.1016/j.jmatprotec.2024.118438