Imaging Transport: Monitoring the Motion of Charge through the Detection of Light.

We present a technique that allows for direct monitoring of charge transport in semiconductors and other luminescent materials via the spatial imaging of recombination luminescence. Drift behavior has been imaged in high purity epitaxial GaAs. We demonstrate the role of sample geometry in the measurement of luminescent spot size, with the goal of developing a contact-free method to determine local diffusion lengths. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]