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A comparative study of thin-film transistors based on mist-CVD deposited InAlZnO with different Al contents.
- Source :
-
Current Applied Physics . Sep2024, Vol. 65, p7-16. 10p. - Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 15671739
- Volume :
- 65
- Database :
- Academic Search Index
- Journal :
- Current Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 178072745
- Full Text :
- https://doi.org/10.1016/j.cap.2024.05.018