Comparative study of RF sputtered Fe2O3- and Fe3O4-doped indium saving indium tin oxide thin films.

In present work the properties of iron-doped indium tin oxide (ITO) films with reduced to 50 mass% indium oxide content prepared by co-sputtering of ITO and Fe2O3 targets and ITO and Fe3O4 targets in mixed argon–oxygen atmosphere were studied by various methods. The influence of different working gas flow rates, RF power of iron oxide targets, type of doping oxide and heat treatment temperatures on the electrical, optical, structural, and morphological properties of the films was characterized by means of four-point probe method, ultraviolet–visible (UV–Vis) spectroscopy, X-ray diffraction and atomic force microscopy. [ABSTRACT FROM AUTHOR]