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Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric.
- Source :
-
Science Bulletin . Jun2024, Vol. 69 Issue 12, p1848-1851. 4p. - Publication Year :
- 2024
-
Abstract
- [Display omitted] [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20959273
- Volume :
- 69
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Science Bulletin
- Publication Type :
- Academic Journal
- Accession number :
- 178138225
- Full Text :
- https://doi.org/10.1016/j.scib.2024.04.059