Ion motion above a biased wafer in a plasma etching reactor.

MLA

Qian, Yuchen, et al. “Ion Motion above a Biased Wafer in a Plasma Etching Reactor.” Physics of Plasmas, vol. 31, no. 6, June 2024, pp. 1–15. EBSCOhost, https://doi.org/10.1063/5.0206860.

APA

Qian, Y., Gekelman, W., Pribyl, P., Piskin, T., & Paterson, A. (2024). Ion motion above a biased wafer in a plasma etching reactor. Physics of Plasmas, 31(6), 1–15. https://doi.org/10.1063/5.0206860

Chicago

Qian, Yuchen, Walter Gekelman, Patrick Pribyl, Tugba Piskin, and Alex Paterson. 2024. “Ion Motion above a Biased Wafer in a Plasma Etching Reactor.” Physics of Plasmas 31 (6): 1–15. doi:10.1063/5.0206860.