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Convex-shaped decay curve of carriers in a vertically coupled InAs/GaAs quantum dot.
- Source :
-
Journal of Applied Physics . 7/15/2005, Vol. 98 Issue 2, p023518. 4p. 1 Black and White Photograph, 5 Graphs. - Publication Year :
- 2005
-
Abstract
- In a study using time-resolved photoluminescence (PL) to examine the carrier dynamics of a vertically coupled InAs/GaAs quantum dot (QD) of 20 periods, we observed an initial slow carrier decay followed by a fast decay. The time at which the transition from slow to fast decay occurred increased on going to lower QD states at a fixed excitation power, and increased with increasing excitation intensity at a fixed QD state. This behavior is attributed to the relatively efficient vertical transfer of carriers in the vertically coupled InAs/GaAs QD. In addition, this vertical carrier transfer makes the rise of the PL signal slower at lower-energy states. This peculiar carrier dynamics behavior was not observed in a single-layered QD or in a vertically uncoupled QD of 20 periods. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 17818255
- Full Text :
- https://doi.org/10.1063/1.1994940