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5.4 GHz - 127 dBc/Hz at 1 MHz GaInP/GaAs HBT quadrature VCO using stacked transformers.

Authors :
Meng, C. C.
Chen, C. H.
Chang, Y. W.
Huang, G. W.
Source :
Electronics Letters (Institution of Engineering & Technology). 8/4/2005, Vol. 41 Issue 16, p906-908. 3p.
Publication Year :
2005

Abstract

The first fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (VCO) using the stacked-transformer LC tank is demonstrated at 5.43–5.31 GHz with low-phase-noise performance. The stacked-transformers are formed by two interconnect metal layers and possess good electrical properties at high frequencies because of the semi-insulating GaAs substrate. The quadrature VCO at 5.38 GHz has phase noise of -127.4 dBc/Hz at 1 MHz offset frequency, output power of -4 dBm and a figure of merit (FOM) -191 dBc/Hz. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00135194
Volume :
41
Issue :
16
Database :
Academic Search Index
Journal :
Electronics Letters (Institution of Engineering & Technology)
Publication Type :
Academic Journal
Accession number :
17830451
Full Text :
https://doi.org/10.1049/el:20051955