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From Dopant to Host: Solution Synthesis and Light‐Emitting Applications of Organic‐Inorganic Lanthanide‐Based Metal Halides.

Authors :
Bai, Tianxin
Wang, Qiujie
Bai, Yunfei
Meng, Qichao
Zhao, Hongyuan
Wen, Ziying
Sun, Haibo
Huang, Li
Jiang, Junke
Huang, Dan
Liu, Feng
Yu, William W.
Source :
Small Structures. Jul2024, Vol. 5 Issue 7, p1-11. 11p.
Publication Year :
2024

Abstract

The rich and unique energy level structure arising from 4fn inner shell configuration of trivalent lanthanide ions (Ln3+) renders them highly attractive for light‐emitting applications. Currently, research primarily focuses on Ln3+ doping in either traditional garnets or the recently developed perovskite phosphors. However, there have been few reports on stable phosphors crystallized with pure lanthanide elements. Herein, a universal solution‐based route to eight Ln3+‐based metal halides from the organic‐inorganic A4LnX7 family is described, where A+ = 4,4‐difluoropiperidinium (DFPD+), Ln3+ = Nd3+, Eu3+, Ho3+, Sm3+, Tm3+, Tb3+, Yb3+, Er3+, and X− = Cl−, Br−. Visible photoluminescence (PL) is observed from Tb3+‐, Eu3+‐, Ho3+‐, and Sm3+‐based compounds with Tb and Eu compositions exhibiting high PL quantum yields of 90–100%; Nd3+‐, Tm3+‐, Yb3+‐, and Er3+‐based crystals show fascinating near‐infrared emission. Light‐emitting diodes (LEDs) fabricated with (DFPD)4TbCl7 yield characteristic emission of Tb3+, representing the first demonstration of electroluminescence from these organic‐inorganic Ln3+‐based metal halides. Moreover, these materials exhibit distinct excitation wavelength‐dependent emission after alloying with different Ln3+ ions, making them interesting for multicolor display and multilevel information encryption applications. It is foreseen that this study will open up the way to a possible design of robust optoelectronic devices based on lanthanide metal halides. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
26884062
Volume :
5
Issue :
7
Database :
Academic Search Index
Journal :
Small Structures
Publication Type :
Academic Journal
Accession number :
178317462
Full Text :
https://doi.org/10.1002/sstr.202400096