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Electrical Response of Al Based Zr-Doped Stacked Tri-Layer HfO2 Deposited at Various Substrate Temperature.
- Source :
-
Russian Physics Journal . Jul2024, Vol. 67 Issue 7, p923-931. 9p. - Publication Year :
- 2024
-
Abstract
- This study examines how the substrate temperature affects the electrical characteristics of the Zr-doped HfO2/Al/Zr-doped HfO2 (HZO/Al/HZO) tri-layer stack. Tri-layer stack is deposited by a simultaneous use of RF magnetron sputtering for HfO2 and DC magnetron sputtering for Zr and Al targets. During deposition, the substrate temperature is varied from 25 to 300°C. The observed hysteresis loop is prominent for the stack deposited at room temperature, while it becomes minute at higher temperatures. Interface trap density and oxide charge density of the tri-layer stack are minimum at 300°C and maximum at room temperatures. Frequency dispersion is detected in the stack deposited at room temperature, but it disappears in stacks deposited at 300°C. In addition, compared to other tri-layer stacks, the stack deposited at 300°C shows good conductivity. Therefore, compared to other samples, the tri-layer stack deposited at 300°C has improved electrical characteristics. It is shown that the substrate temperature has a significant impact on the electrical properties of the stack. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10648887
- Volume :
- 67
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Russian Physics Journal
- Publication Type :
- Academic Journal
- Accession number :
- 178416946
- Full Text :
- https://doi.org/10.1007/s11182-024-03198-x