Synthesis of MS2 (M=Mo, W) thin films by chemical solution deposition.

MoS 2 and WS 2 as typical two-dimensional transition metal dichalcogenides have been investigated since of rich physicochemical properties. To deposit MoS 2 and WS 2 thin films, chemical solution deposition as a facile route had been used showing the advantages of high component controllability, low cost, sequential processing of device, easy preparation of large-size films and facile preparation of films on irregular substrates. Here, Mo 1-x W x S 2 (0 ≤ x ≤ 1) thin films were successfully prepared by chemical solution deposition method. The phases as well as microstructures were investigated using field emission scanning electron microscope, atomic force microscopy, transmission electron microscopy, Raman and x-ray photoelectron spectroscopy measurements. The prepared Mo 1-x W x S 2 thin films are used as hydrogen evolution reaction (HER) catalyst electrodes for water splitting. The Mo 0·3 W 0·7 S 2 thin film catalyst shows an overpotential of 345 mV at a current density of 10 mA cm−2 and the corresponding Tafel slope of 169 mV dec−1 in 0.5 M sulfuric acid. The results will provide a facile method to deposit MX 2 thin films. MX 2 (M = Mo, W) are a class of two-dimensional materials with layered structure. Due to their unique physicochemical properties, MX 2 have attracted great attention in various fields. Chemical solution deposition (CSD) method shows that high-quality MS 2 films can be used in a variety of electronic devices. Here, Mo 1-x W x S 2 (0 ≤ x ≤ 1) thin films are firstly designed and prepared. The prepared films were dense and uniform with 2H phase. As HER catalyst electrodes for water splitting, the Mo 0·3 W 0·7 S 2 thin film catalyst shows an overpotential of 345 mV at a current density of 10 mA cm−2 and the corresponding Tafel slope is 169 mV dec−1 in 0.5 M sulfuric acid. The results will provide a facile method to prepare large-area two-dimensional transition metal dichalcogenides thin films with low cost. [Display omitted] • MS 2 (M = Mo, W) thin films were deposited by chemical solution deposition method. • The phases and microstructures were investigated for dense and uniform with 2H phase. • The prepared Mo 1-x W x S 2 thin films shows promising HER activities. • A facile method for low cost and large-area two-dimensional transition metal chalcogenide films was investigated. [ABSTRACT FROM AUTHOR]