Electronic structure and magnetothermal property of H-VSe2 monolayer manipulated by carrier doping.

High-performance and stable spintronic devices have garnered considerable attention in recent years. Based on first-principle and Monte Carlo calculations, we demonstrate that under reasonable carrier doping, H-VSe2 exhibits 100% spin polarization, a magnetic anisotropy energy of 581 μeV, a tunable easy-axis, and a Curie temperature of 330 K. Moreover, Dzyaloshinskii–Moriya interactions in H-VSe2 and magnetic hysteresis loops are determined theoretically for the first time, which provides more precise and comprehensive descriptions of its magnetic properties under finite temperatures and external magnetic field. This work suggests that H-VSe2 is a powerful candidate for spintronic devices, and it provides solid theoretical support for future experiments. [ABSTRACT FROM AUTHOR]