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Power Bipolar Devices Based on Silicon Carbide.
- Source :
-
Semiconductors . Aug2005, Vol. 39 Issue 8, p861-877. 17p. - Publication Year :
- 2005
-
Abstract
- High-voltage 4H-SiC bipolar devices, including rectifier diodes, bipolar junction transistors, and thyristors are discussed. The results of experimental and theoretical studies of the steady-state and transient characteristics of these devices are presented. Specific features of device operation, related to the specific electronic properties of silicon carbide and SiC-based p–n structures, are analyzed. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 10637826
- Volume :
- 39
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 17889249
- Full Text :
- https://doi.org/10.1134/1.2010676