Cite
Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing.
MLA
Lee, Seungjun, et al. “Volatile Memory Characteristics of CMOS-Compatible HZO Ferroelectric Layer for Reservoir Computing.” Ceramics International, vol. 50, no. 19, Oct. 2024, pp. 36495–502. EBSCOhost, https://doi.org/10.1016/j.ceramint.2024.07.035.
APA
Lee, S., Kim, D., & Kim, S. (2024). Volatile memory characteristics of CMOS-compatible HZO ferroelectric layer for reservoir computing. Ceramics International, 50(19), 36495–36502. https://doi.org/10.1016/j.ceramint.2024.07.035
Chicago
Lee, Seungjun, Doohyung Kim, and Sungjun Kim. 2024. “Volatile Memory Characteristics of CMOS-Compatible HZO Ferroelectric Layer for Reservoir Computing.” Ceramics International 50 (19): 36495–502. doi:10.1016/j.ceramint.2024.07.035.