Electric field-induced modulation of electronic and optical properties in doped CdTe/CdS core/shell quantum dots embedded in an oxide matrix.

This work presents a theoretical analysis of a CdTe/CdS core/shell quantum dots embedded in a dielectric oxide matrix under the influence of hydrogenic impurity and the applied electric field intensity. The eigenstates and their corresponding eigenfunctions are computed by solving the Schrodinger equation using the finite element method within the effective mass approximation. The first-order linear and third-order nonlinear optical absorption coefficients as well as the refractive index changes are computed based on the compact density matrix approach. The obtained result shows that the first-order linear and third-order nonlinear optical properties are more pronounced with the electric field, surrounding oxide matrix and the donor impurity effects. However, the first-order linear and third-order nonlinear optical absorption coefficients and refractive index changes can experience a red or blue shift under the influence of electric field, oxide matrix and hydrogenic impurity. In addition, under all conditions, the height peaks of these optical properties can be raised (fall). Our findings demonstrate the critical importance of considering the roles of electric field, the presence of donor impurity, and the capped dielectric oxide matrix in the design and fabrication of core–shell-based optoelectronic devices. • The presence of the emergent TiO 2 oxide matrix (OM) significantly improves the peak values of the optical properties compared to other OM or isolated quantum dots. • The application of an external electric field affects the absorption coefficient differently depending on the nature of the transition. • The presence of a hydrogen-confined impurity causes a blue-shift of the peak absorption coefficient. [ABSTRACT FROM AUTHOR]