Investigation of the optoelectronic properties of InAsNBi/InAs quantum confined heterostructure in the presence of hydrostatic pressure for long wavelength infrared sensing.

This article investigates the effect of hydrostatic pressure on the optoelectronic characteristics of the InAsNBi/InAs quantum well (QW) system using an expanded version of the standard 8-band k dot p Hamiltonian. The effect of hydrostatic pressure on important structural and electronic parameters such as elastic constants, band gap, band offset, band structure, and effective masses are investigated in this manuscript. These factors assisted in the computation of optical gain spectra for different quantum well structures. Furthermore, this study is extended to several heterostructures by including diverse barrier materials such as GaAs, GaSb, and InP with InAsNBi QW. The optical analysis of these heterostructures can help the researchers to design and fabricate optoelectronic devices that can operate in LWIR regimes owing to the narrow bandgap of quaternary InAsNBi. Additionally, we examined the optical characteristics in TE mode for variations in hydrostatic pressure. [ABSTRACT FROM AUTHOR]