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Integrated magneto-photonic non-volatile multi-bit memory.

Authors :
Pezeshki, H.
Li, P.
Lavrijsen, R.
Heck, M.
Koopmans, B.
Source :
Journal of Applied Physics. 8/28/2024, Vol. 136 Issue 8, p1-12. 12p.
Publication Year :
2024

Abstract

We present an integrated magneto-photonic device for all-optical switching of non-volatile multi-bit spintronic memory. The bits are based on stand-alone magneto-tunnel junctions, which are perpendicularly magnetized with all-optically switchable free layers, coupled onto photonic crystal nanobeam cavities on an indium phosphide based platform. This device enables switching of the magnetization state of the bits by locally increasing the power absorption of light at resonance with the cavity. We design an add/drop network of cavities to grant random access to multiple bits via a wavelength-division multiplexing scheme. Based on a three-dimensional finite-difference time-domain method, we numerically illustrate a compact device capable of switching and accessing at least eight bits in different cavities with a 5 nm wavelength spacing in the conventional (C) telecommunication band. Our multi-bit device holds promise as a new paradigm for developing an ultrafast photonically addressable spintronic memory and may also empower novel opportunities for photonically driven spintronic-based neuromorphic computing. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
136
Issue :
8
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
179373848
Full Text :
https://doi.org/10.1063/5.0221825