Nanostructured inclusions enhancing the thermoelectric performance of Higher Manganese Silicide by modulating the transport properties.

Higher Manganese Silicides (HMS) are the best p-type materials beneficial for intermediate-temperature range thermoelectric device applications due to their high thermal stability and inexpensive constituent elements. Although the cost-effective HMS materials possess high thermal stability, they are concerned with high thermal conductivity values. The nanocomposite approach was promised to lower the thermal transport properties without affecting the electrical transport properties, which is experimented in the present work. The higher manganese silicide with varying weight percentages of nano-structured Si 0.8 Ge 0.2 B 0.02 inclusions was experimented to decrease the thermal conductivity and to enhance the electrical properties. The lowest thermal conductivity value of ≃ 2.24 W/mK was reported with 2 wt% Si 0.8 Ge 0.2 B 0.02 addition in HMS material. Also, the HMS-2 wt. % Si 0.8 Ge 0.2 B 0.02 improved the transport properties, electrical conductivity and Seebeck coefficient values of ≃ 4 × 104 S/m and ≃ 220 μV/K respectively. Furthermore, various mathematical models were proposed here to simulate the composite approach results, which were then correlated with experimental results. [ABSTRACT FROM AUTHOR]