The dissolution behavior of crystal-originated particle in 300 mm Czochralski silicon under argon annealing.

In this paper, the dissolution behavior of crystal-originated particle (COP) in 300 mm Czochralski silicon under argon annealing was investigated. The latex sphere equivalent size distributions of defects along the depth direction in silicon wafers annealed under different conditions were quantified utilizing chemical–mechanical polishing and localized light scattering inspection. The interstitial oxygen concentration profiles were quantified by secondary ion mass spectrometry, and the distributions of oxygen precipitation within annealed wafers were obtained based on peak analysis. Furthermore, the classical theoretical model was employed to elucidate the depth-dependent dissolution of COP. Based on the initial COP sizes and oxygen concentrations, the relationship between COP sizes and depth after annealing was calculated. The depth distributions of defects obtained by combining the dissolution of COP from calculation with the changes of oxygen precipitation were found to be highly consistent with the measurement results. These findings could enhance the understanding of the mechanism of COP dissolution, which contributes to the production of defect-free silicon wafers for nanometre-scale integrated circuits. [ABSTRACT FROM AUTHOR]