RF Noise Modeling in SiGe HBTs.

This paper presents RF noise modeling in advanced SiGe HBTs using experimental data from 2 to 26 GHz. Several widely used noise models are evaluated, including the conventional SPICE model, the Van Vliet model, the transport noise model, and a recently developed extraction based model. The connections between various models are investigated. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]