Cite
Polarity control and crystalline quality improvement of AlN thin films grown on Si(111) substrates by molecular beam epitaxy.
MLA
Fan, Shizhao, et al. “Polarity Control and Crystalline Quality Improvement of AlN Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy.” Journal of Applied Physics, vol. 136, no. 14, Oct. 2024, pp. 1–11. EBSCOhost, https://doi.org/10.1063/5.0219167.
APA
Fan, S., Yin, Y., Liu, R., Zhao, H., Liu, Z., Sun, Q., & Yang, H. (2024). Polarity control and crystalline quality improvement of AlN thin films grown on Si(111) substrates by molecular beam epitaxy. Journal of Applied Physics, 136(14), 1–11. https://doi.org/10.1063/5.0219167
Chicago
Fan, Shizhao, Yuhao Yin, Rong Liu, Haiyang Zhao, Zhenghui Liu, Qian Sun, and Hui Yang. 2024. “Polarity Control and Crystalline Quality Improvement of AlN Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy.” Journal of Applied Physics 136 (14): 1–11. doi:10.1063/5.0219167.