Atomic-level insights into CeO2 performance: Chemical interactions in CMP explored through CeO2-SiO2 studies.

This study explores the effects of atomic-level factors on the performance of CeO 2 when interacting with SiO 2 films. It specifically examines how different precursors, the ratio of Ce to OH, and reaction temperatures influence outcomes. Our findings reveal that smaller particles, around 5 nm in size, created using a Ce4+ precursor, are more effective at removing SiO 2 films compared to larger, more crystalline particles from a Ce3+ precursor. This is due to their increased interaction with the SiO 2 film during the polishing process, challenging the conventional emphasis on mechanical abrasion in chemical mechanical planarization (CMP) and highlighting the crucial role of chemical interactions. Further analysis through FT-IR and TGA-FTIR techniques showed distinct functional group profiles on the ceria surfaces. Ceria derived from Ce4+ exhibited a higher presence of OH and NO 3 groups, enhancing adsorption capabilities, as verified by CHN analysis. Importantly, first-principles calculations identified these surface groups as key to improving adhesion to SiO 2 films. Surfaces of amorphous CeO 2 , rich in -OH and -NO 3 groups, showed significantly higher adhesion levels than their crystalline counterparts, connecting crystallinity to chemical functionality. This new insight leads to the possibility of designing next-generation CeO 2 abrasives with increased chemical activity. [ABSTRACT FROM AUTHOR]