Synergistic effect of concentration and annealing on structural, mechanical, and room-temperature thermoelectric properties of n-type Ga-doped ZnO films.

The development of Ga-doped Zinc Oxide (GZO) films from nontoxic, abundant elements using a cost-effective and scalable approach is crucial for the profitability and sustainability of thermoelectric applications. Challenges in formulating GZO film inks have led to extensive experimentation to enhance their thermal, structural, mechanical, and room-temperature thermoelectric properties by adjusting ink concentration and annealing treatment. Increasing the GZO nanoparticle concentration reduced the melting temperature and crystallinity, whereas annealing at 200 °C decomposed the polyethylene oxide (PEO) binder. TEM analysis revealed the polycrystalline structure of the GZO nanoparticles and their interaction with the binder, while XRD patterns confirmed the characteristic peaks of the GZO films; annealing effectively eliminated the PEO diffraction peaks. The GZO films from the concentrated 1.24M ink exhibited minimal grain growth, reduced lattice strains, uniform elemental distribution, and enhanced surface texture and conductivity, which were further improved by annealing. Increasing the GZO nanoparticle concentration facilitated the formation of a conductive network, while annealing enhanced the conductivity by promoting the formation of a cohesive, interconnected network through impurity removal, nanoparticle redistribution, and coalescence. Consequently, the annealed 1.24M film demonstrated the highest nanohardness of 791 MPa and a thermoelectric power factor of 1.78 nW/m∙K2 at room temperature, which were attributed to enhanced electrical conductivity and Seebeck coefficient through concentration and annealing synergies. [ABSTRACT FROM AUTHOR]