Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions.

Molecular beam epitaxy is applied for the GaN/InGaN growth under In‐bilayer stabilized conditions, which require substrate temperatures above 580 °C for sufficient indium desorption. Under these conditions the indium content is limited to xIn≤0.3$x_{\text{In}} \leq 0.3$, as determined by a novel reflection high energy electron diffraction technique, which is based on indium adsorption and subsequent consumption at varying gallium flux. As‐grown structures show degraded surfaces after indium desorption. This effect is eliminated by applying excess gallium before and after InGaN growth, which results in morphologies and dislocation densities comparable to GaN/AlGaN structures. [ABSTRACT FROM AUTHOR]