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Effects of Al content on properties of Al–N codoped ZnO films
- Source :
-
Applied Surface Science . Aug2005, Vol. 249 Issue 1-4, p203-207. 5p. - Publication Year :
- 2005
-
Abstract
- Abstract: N doped and Al–N codoped ZnO films were prepared by dc reactive magnetron sputtering with a series of metal–Zn targets having different Al contents. The best p-type electrical properties of codoped ZnO, such as carrier concentration of 2.52×1017 cm−3, resistivity of 28.3Ωcm can be realized by using 0.4at.% Al target. Results of Hall effect and X-ray photoelectron spectroscopy (XPS) measurements confirm that the presence of Al indeed facilitates the incorporation of N through formation Aln codoped ZnO. Finally, a new judgement for codoping effect in ZnO is proposed tentatively: the best codoping effect can be realized when the codoped ZnO films possess a closest (002) d-spacing value to the nominally undoped ZnO. [Copyright &y& Elsevier]
- Subjects :
- *ALUMINUM
*MOLECULAR orbitals
*SPECTRUM analysis
*ZINC oxide
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 249
- Issue :
- 1-4
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 18134387
- Full Text :
- https://doi.org/10.1016/j.apsusc.2004.11.073