Back to Search Start Over

Carrier Trapping Deactivation by Halide Alloying in Formamidinium‐Based Lead Iodide Perovskites.

Authors :
Jiménez‐López, Jesús
Cortecchia, Daniele
Wong, E Laine
Folpini, Giulia
Treglia, Antonella
Alvarado‐Leaños, Ada Lilí
Wu, Chun‐Sheng
Olivati, Andrea
Petrozza, Annamaria
Source :
Advanced Functional Materials. 12/9/2024, Vol. 34 Issue 50, p1-11. 11p.
Publication Year :
2024

Abstract

Formamidinium lead iodide (FAPbI3) is the benchmark material for the most efficient near‐infrared perovskite light‐emitting diodes (LEDs) and a promising gain medium for perovskite‐based coherent light sources. Thus, it is crucial to understand and control its defect chemistry to harness the full potential of its exceptional radiative recombination properties. Here, this topic is addressed by tailoring the I− to Br− ratio in the perovskite composition. It is found that introducing small Br− quantities improves the yield of radiative recombination with a beneficial impact on both spontaneous and amplified spontaneous emission (ASE) and improves the semiconductor photostability leading to reduced luminescence efficiency roll‐off and enhanced radiance in LEDs. By employing photoemission electron microscopy (PEEM), this improvement in optoelectronic performance can be directly correlated to a reduced hole‐trapping activity achieved by replacing iodide with bromide, thus, providing a convenient yet powerful synthetic approach to control the defect chemistry of the material and fostering its implementation in advanced photonic platforms. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1616301X
Volume :
34
Issue :
50
Database :
Academic Search Index
Journal :
Advanced Functional Materials
Publication Type :
Academic Journal
Accession number :
181439843
Full Text :
https://doi.org/10.1002/adfm.202308545