DEFECT FORMATION IN MIS STRUCTURES BASED ON SILICON WITH AN IMPURITY OF YTTERBIUM.

The characteristics of silicon MIS structures with ytterbium impurity are studied using non-stationary capacitance spectroscopy of deep levels. It is established that the presence of ytterbium atoms in the bulk of the silicon substrate leads to a shift in the capacitance-voltage characteristics towards positive bias voltages and a decrease in the density Nss of the surface states of the MIS structures. It is shown that this effect depends on the concentration of ytterbium atoms in the silicon substrate of the studied structures. In MIS structures based on Si<Yb>, one deep level with an ionization energy Ec-0.32 eV is detected. [ABSTRACT FROM AUTHOR]