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Innovative molybdenum oxide iodide/poly-o-aminobenzenethiol nanocomposite thin film for advanced light sensing.

Authors :
Rabia, Mohamed
Alkallas, Fatemah H.
Alrebdi, Tahani A.
Trabelsi, Amira Ben Gouider
Source :
Optical & Quantum Electronics. Jan2025, Vol. 57 Issue 1, p1-15. 15p.
Publication Year :
2025

Abstract

The novel molybdenum oxide iodide/poly-o-aminobenzenethiol (MoO2I2/POABT) nanocomposite thin film presents a promising solution for advanced light sensing and captures in optoelectronic devices. This thin film is fabricated through a two-step process: first, the oxidation of o-aminobenzenethiol using iodide, followed by a reaction with Na2MoO4, leading to the integration of MoO2I2 within the POABT matrix. The resulting film has a notable bandgap of 2.2 eV, a tube-shaped morphology with a diameter of 150 nm, and a crystalline size of 119 nm, making it ideal for use as a light sensor and optoelectronic device. Device sensitivity is evaluated using linear sweep voltammetry under light exposure. The photocurrent density (Jph) reaches 0.88 mA/cm², with a photocurrent of 0.28 mA/cm². Sensitivity testing across various photon energies and wavelengths shows peak Jph values at 340 nm and 440 nm, with strong performance at 540 nm and 730 nm. Noteworthy photoresponsivity (R) is observed at 340 nm and 440 nm, with values of 8.0 and 7.4 mA/W, respectively. Additional R values of 6.3 and 6.0 mA/W are noted at 540 and 730 nm. The highest detectivity (D) values are recorded at 340 nm and 440 nm, measuring 0.181 × 10¹⁰ and 0.167 × 10¹⁰ Jones, while lower D values of 0.142 × 10¹⁰ and 0.135 × 10¹⁰ Jones are seen at 540 nm and 730 nm, respectively. The MoO2I2/POABT nanocomposite thin film shows great potential for commercial and industrial optoelectronic applications with its excellent reproducibility, strong performance metrics, and simple and scalable fabrication process. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03068919
Volume :
57
Issue :
1
Database :
Academic Search Index
Journal :
Optical & Quantum Electronics
Publication Type :
Academic Journal
Accession number :
182279660
Full Text :
https://doi.org/10.1007/s11082-024-07781-x