Surface passivation using 2-methoxyphenethylammonium iodide for efficient inverted perovskite solar cells.

Non-radiative recombination due to surface defects in perovskite films significantly limited the performance improvement of perovskite solar cells. This study presented a method for passivating the surface of perovskite films in inverted (p-i-n) solar cells using annealing-free, highly polar 2-methoxyphenethylammonium iodide. Observations show that the passivator binds to Pb2+, effectively passivating the under-coordinated lead sites on the perovskite layer and inhibiting non-radiative recombination. The passivator also improved carrier extraction efficiency by controlling the perovskite's surface potential. Thus, the inverted structure perovskite solar cell attained a remarkable 25.38 % photoelectric conversion efficiency, and the unencapsulated device maintained more than 90 % of its original PCE after aging for 256 h at 85 °C. This study offers a novel approach to mitigate interface defects and regulate surface potential, driving further advancements in high-performance inverted perovskite solar cells. Strong polarity, annealing-free 2-methoxyphenethylammonium iodide passivates the surface of perovskite films in inverted (p-i-n) solar cells. The obtained inverted perovskite solar cell has a remarkable photoelectric conversion efficiency of 25.38 %. [Display omitted] • High polarity 2-methoxyphenethylammonium iodide modified perovskite surface. • Passivation defects to weaken non radiative recombination. • Increasing the surface potential of perovskite to improve carrier extraction. • Improve the photoelectric conversion efficiency of inverted devices to 25.38 %. • Enhanced the thermal aging stability of the devices. [ABSTRACT FROM AUTHOR]