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dV/dt effect in high-voltage 4H-SiC thyristors.
- Source :
-
Semiconductor Science & Technology . Aug2005, Vol. 20 Issue 8, p793-795. 3p. - Publication Year :
- 2005
-
Abstract
- The switching of high-voltage (1.5 kV) 4H-SiC thyristors by the dV/dt effect has been investigated for the first time in the temperature range from 300 to 504 K. At a rise time of the forward bias V(t) equal to 30 ns, the characteristic bias at which the structure under investigation can be switched on by the dV/dt effect decreases steadily from 289 V at room temperature (dV/dt ~ 9.7 kV µs-1) to 137 V at T = 504 K. The characteristic value of the critical charge per unit area, Qcr, is ~1.9 × 10-7 C cm-2 at room temperature and also decreases steadily as the temperature increases. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 20
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 18246990
- Full Text :
- https://doi.org/10.1088/0268-1242/20/8/026