Cite
High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation.
MLA
Weishart, H., et al. “High-Fluence Si-Implanted Diamond: Optimum Implantation Temperature for SiC Formation.” Journal of Applied Physics, vol. 98, no. 4, Aug. 2005, p. 043503. EBSCOhost, https://doi.org/10.1063/1.2009073.
APA
Weishart, H., Eichhorn, F., Heera, V., Pécz, B., Barna, Á., & Skorupa, W. (2005). High-fluence Si-implanted diamond: Optimum implantation temperature for SiC formation. Journal of Applied Physics, 98(4), 043503. https://doi.org/10.1063/1.2009073
Chicago
Weishart, H., F. Eichhorn, V. Heera, B. Pécz, Á. Barna, and W. Skorupa. 2005. “High-Fluence Si-Implanted Diamond: Optimum Implantation Temperature for SiC Formation.” Journal of Applied Physics 98 (4): 043503. doi:10.1063/1.2009073.