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Terahertz generation in submicron GaN diodes within the limited space-charge accumulation regime.
- Source :
-
Journal of Applied Physics . 9/15/2005, Vol. 98 Issue 6, p064507. 7p. 1 Chart, 6 Graphs. - Publication Year :
- 2005
-
Abstract
- The conditions for microwave power generation with hot-electron transport are investigated in a submicron GaN diode when it operates in the limited space-charge accumulation (LSA) mode. Applying a transport model based on the local quasistatic approximation, the analysis shows that the nitride diodes can support the LSA mode of oscillation in the terahertz-frequency range. For a 100 nm n-GaN diode with a cross section of 500 μm2 and the electron density of 1×1017 cm-3, the generated microwave power is estimated to be as high as ≈0.6 W with the corresponding dc-to-rf conversion efficiency of ≈9% and the negative differential resistance of ≈-1.3 Ω; which thus provides an efficient mechanism to achieve very high-frequency microwave generation in the nitrides. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRON transport
*DIODES
*NITRIDES
*ELECTRON distribution
*OSCILLATIONS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 98
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 18454669
- Full Text :
- https://doi.org/10.1063/1.2060956