Cite
Stress relaxation in the GaN/AlN multilayers grown on a mesh-patterned Si(111) substrate.
MLA
Chen, C. H., et al. “Stress Relaxation in the GaN/AlN Multilayers Grown on a Mesh-Patterned Si(111) Substrate.” Journal of Applied Physics, vol. 98, no. 9, Nov. 2005, p. 093509. EBSCOhost, https://doi.org/10.1063/1.2122627.
APA
Chen, C.-H., Yeh, C.-M., Hwang, J., Tsai, T.-L., Chiang, C.-H., Chang, C.-S., & Chen, T.-P. (2005). Stress relaxation in the GaN/AlN multilayers grown on a mesh-patterned Si(111) substrate. Journal of Applied Physics, 98(9), 093509. https://doi.org/10.1063/1.2122627
Chicago
Chen, C.-H., C.-M. Yeh, J. Hwang, T.-L. Tsai, C.-H. Chiang, C.-S. Chang, and T.-P. Chen. 2005. “Stress Relaxation in the GaN/AlN Multilayers Grown on a Mesh-Patterned Si(111) Substrate.” Journal of Applied Physics 98 (9): 093509. doi:10.1063/1.2122627.