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Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays

Authors :
Li, Chun
Fang, Guojia
Sheng, Su
Chen, Zhiqiang
Wang, Jianbo
Ma, Shuang
Zhao, Xingzhong
Source :
Physica E. Dec2005, Vol. 30 Issue 1/2, p169-173. 5p.
Publication Year :
2005

Abstract

Abstract: Arrays of aligned silicon nanowire (SiNW) were synthesized on a silicon (100) substrate by self-assembling electroless nanoelectrochemistry. Compared with that of bulk crystal silicon, the first-order Raman peak of the silver cap-removed SiNW arrays shows a downshift and asymmetric broadening due to the phonon quantum confinement effects, and intensity enhancement. Field electron emission from the SiNWs was also investigated. The turn-on field was found to be about 12V/μm at a current density of 0.01mA/cm2. These highly densified and ordered SiNW arrays can be expected to have favorable applications in vacuum electronic or optoelectronic devices. [Copyright &y& Elsevier]

Details

Language :
English
ISSN :
13869477
Volume :
30
Issue :
1/2
Database :
Academic Search Index
Journal :
Physica E
Publication Type :
Academic Journal
Accession number :
19045112
Full Text :
https://doi.org/10.1016/j.physe.2005.08.005