Efficient blue electroluminescent device using tetra(β-naphthyl)silane as a hole-blocking material.

We report an efficient blue light-emitting diode (LED) using N, N′-bis(1-naphthyl)-N, N′-diphenylbenzidine as an emitting layer and tetra(β-naphthyl)silane (TNS) as a hole-blocking layer (HBL). We find that the hole-blocking performance, thermal stability, and film-forming ability of TNS are improved over those of the prototypical hole-blocking material 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP). The device that used TNS as the HBL exhibits a narrower light emission and higher current efficiency (2.5 cd/A) as compared with the device containing BCP as the HBL. TNS should be promising as an excellent hole-blocking layer in LEDs. [ABSTRACT FROM AUTHOR]