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A Si/CdTe Semiconductor Compton Camera.
- Source :
-
IEEE Transactions on Nuclear Science . Oct2005 Part 3, Vol. 52 Issue 5, p2045-2051. 7p. - Publication Year :
- 2005
-
Abstract
- We are developing a Compton camera based on Si and CdTe semiconductor imaging devices with high energy resolution. In this paper, results from the most recent prototype are re- ported. The Compton camera consists of six layered double-sided Si Strip detectors and CdTe pixel detectors, which are read out with low noise analog ASICs, VA32TAs. We obtained Compton reconstructed images and spectra of line gamma-rays from 122 keV to 662 keV. The energy resolution is 9.1 keV and 14 keV at 356 keV and 511 keV, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 52
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 19314502
- Full Text :
- https://doi.org/10.1109/TNS.2005.856995