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High carrier mobility in low band gap polymer-based field-effect transistors.
- Source :
-
Applied Physics Letters . 12/19/2005, Vol. 87 Issue 25, p252105. 3p. 1 Diagram, 2 Graphs. - Publication Year :
- 2005
-
Abstract
- A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing infrared light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is solution-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm2 V-1 s-1. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 87
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 19316664
- Full Text :
- https://doi.org/10.1063/1.2142289