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Defect analysis in Czochralski-grown Yb:FAP crystal
- Source :
-
Journal of Crystal Growth . Jan2006, Vol. 286 Issue 2, p498-501. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: Growth-induced defects in Yb:FAP crystals grown by the Czochralski method have been investigated by optical microscopy, chemical etching, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS). Anisotropic etching features have been observed on two FAP crystal planes: (0001) and . The shape of etch pits on the (0001) plane is hexagonal, while the etch pits on the plane have a variety of irregular shapes. It is also found that the density of etch pit varies along the boule. Based on the experimental observations, the formation mechanisms of growth defects are discussed, and methods for reducing the growth-induced defect concentration is proposed. [Copyright &y& Elsevier]
- Subjects :
- *ELECTRON microscopy
*PARTICLES (Nuclear physics)
*SPECTRUM analysis
*OPTICS
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 286
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 19340886
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2005.10.116