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Reduction of switching field in spin-flop switching for high-density magnetic random access memory.
- Source :
-
Journal of Applied Physics . 1/1/2006, Vol. 99 Issue 1, p014502. 8p. 6 Diagrams, 3 Graphs. - Publication Year :
- 2006
-
Abstract
- A magnetization switching method for magnetic random access memory (MRAM), recently proposed by Savtchenko et al. [U.S. Patent No. 6,545,906 (2003)], is known to have an important advantage of a wide window for bit writing over the conventional method based on the asteroid curve, but it has a serious problem of high switching fields. In an effort to solve this problem, the effects of the thickness asymmetry and antiferromagnetic exchange coupling of the synthetic antiferromagnetic free-layer structure on the switching field have been investigated by micromagnetic computer simulation. At conditions relevant to high-density MRAM, magnetization switching in the direct write mode occurs at reasonably low values of word- and bit-line fields (below 100 Oe), combined with a substantially wide window for bit writing. A much wider window is observed in the toggle mode, but the required switching fields are too high, being over 150 Oe. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 99
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 19481815
- Full Text :
- https://doi.org/10.1063/1.2150597