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A novel method for growing polycrystalline Ge layer by using UHVCVD
- Source :
-
Surface & Coatings Technology . Feb2006, Vol. 200 Issue 10, p3261-3264. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: Poly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 °C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperature. SEM image presents the films with uniform grain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method. [Copyright &y& Elsevier]
- Subjects :
- *POLYCRYSTALS
*CRYSTALS
*THIN films
*CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 02578972
- Volume :
- 200
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Surface & Coatings Technology
- Publication Type :
- Academic Journal
- Accession number :
- 19588531
- Full Text :
- https://doi.org/10.1016/j.surfcoat.2005.07.026