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Shot-Noise-Induced Excess Low-Frequency Noise in Floating-Body Partially Depleted SOI MOSFET's.
- Source :
-
IEEE Transactions on Electron Devices . Jun99, Vol. 46 Issue 6, p1180. 6p. 4 Black and White Photographs, 3 Diagrams, 5 Graphs. - Publication Year :
- 1999
-
Abstract
- Proposes a physically-based noise model which predicts that the excess low-frequency noise shows a Lorentzian-like spectrum. Information on silicon-on-insulator (SOI); Noise sources in an SOI metal-oxide-silicon field-effect transistor; Results and discussions; Conclusions.
- Subjects :
- *SILICON-on-insulator technology
*FIELD-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 46
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 1963355
- Full Text :
- https://doi.org/10.1109/16.766881