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Thickness dependence of X-ray absorption and photoemission in Fe thin films on Si(0 0 1)
- Source :
-
Journal of Electron Spectroscopy & Related Phenomena . May2006, Vol. 151 Issue 3, p199-203. 5p. - Publication Year :
- 2006
-
Abstract
- Abstract: To investigate the initial growth of Fe films on Si(0 0 1) and the Fe/Si interface, Fe films at various thicknesses have been systematically studied by soft X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). The Fe L edge XAS spectrum shows a strong thickness dependence with broader line-width for thinner films. Detailed analysis of the Fe absorption signal as a function of the thickness shows that the broad linewidth of Fe L edge XAS spectra is mostly contributed by the first Fe layer at the Fe/Si interface. In contrast to XAS, Fe 2p photoemission spectra for these films are identical. However, valence band photoemission also shows a strong thickness dependence. Comparing the valence band photoemission spectra of the thin Fe/Si(0 0 1) films with that of pure Si and the thickest Fe film, the difference spectra at all thicknesses show almost identical shape indicating the same origin: the Fe/Si interface. Thus, it is mainly the first Fe layer at Fe/Si layer that is reactive with the Si substrate changing its electronic structure. [Copyright &y& Elsevier]
- Subjects :
- *ELECTRON spectroscopy
*ELECTRON emission
*PHOTOEMISSION
*ABSORPTION
Subjects
Details
- Language :
- English
- ISSN :
- 03682048
- Volume :
- 151
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Electron Spectroscopy & Related Phenomena
- Publication Type :
- Academic Journal
- Accession number :
- 19913625
- Full Text :
- https://doi.org/10.1016/j.elspec.2005.12.006