Design, Fabrication, and Characterization of Low Forward Drop, Low Leakage, 1-kV 4H- SiC JBS Rectifiers.

The 1-kV 4H-SiC planar junction barrier Schottky (JBS) rectifiers were designed, fabricated, and characterized. Different p+ implantation dosages and activation anneal methods were used to determine an optimum baseline process. Using the optimized process, the forward drop of our JBS rectifiers is < 1.5 V while the reverse leakage current density is < 1 × 10-5 A/cm-2. Blocking voltage > 1 kV was achieved using a single-zone junction termination extension termination. It was shown experimentally that 4-μm p-type implantation window spacing gives an optimum tradeoff between forward drop voltage and leakage current density for these rectifiers, yielding a specific on-resistance of 3 mΩ ∙ cm². [ABSTRACT FROM AUTHOR]