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Silicon nanocrystal-based non-volatile memory devices
- Source :
-
Thin Solid Films . May2006, Vol. 504 Issue 1/2, p25-27. 3p. - Publication Year :
- 2006
-
Abstract
- Abstract: In this work, we have investigated the performance and reliability of a Flash memory based on silicon nanocrystal synthesized with very-low energy ion beams. The devices are fabricated with a conventional CMOS process and the size of the nanocrystal is ∼4 nm as determined from TEM measurement. Electrical properties of the devices with a tunnel oxide of either 3 nm or 7 nm are evaluated. The devices exhibit good endurance up to 105 W/E cycles even at the high operation temperature of 85 °C for both the tunnel oxide thicknesses. For the thicker tunnel oxide (i.e., the 7-nm tunnel oxide), a good retention performance with an extrapolated 10-year memory window of ∼0.3 V (or ∼20% of charge lose after 10 years) is achieved. However, ∼70% of charge loss after 10 years is expected for the thinner tunnel oxide (i.e., the 3-nm tunnel oxide). [Copyright &y& Elsevier]
- Subjects :
- *FLASH memory
*NANOCRYSTALS
*ION bombardment
*OXIDES
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 504
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 20183484
- Full Text :
- https://doi.org/10.1016/j.tsf.2005.09.031