Back to Search
Start Over
An electrical study of behaviors of Si nanocrystals distributed in the gate oxide near the oxide/substrate interface of a MOS structure
- Source :
-
Thin Solid Films . May2006, Vol. 504 Issue 1/2, p32-35. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: In this work, we have investigated the capacitance–voltage (C–V) and conductance–voltage (G–V) characteristics of silicon nanocrystals (nc-Si) distributed in the gate oxide very near the SiO2/Si interface of a Metal-Oxide-Semiconductor (MOS) structure. The MOS structure is found to be sensitive to only the positive voltage stress from which charging of the nanocrystals causes a negative flatband voltage shift. At the same time, a large conductance peak is observed due to the energy loss via the neutral-nanocrystal paths near the SiO2/Si interface. Besides, breakdown of the dielectric film containing the nc-Si is also observed from the G–V characteristic. [Copyright &y& Elsevier]
- Subjects :
- *NANOCRYSTALS
*SILICON
*METAL oxide semiconductors
*DIELECTRIC films
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 504
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 20183486
- Full Text :
- https://doi.org/10.1016/j.tsf.2005.09.035