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The properties of Ru on Ta-based barriers
- Source :
-
Thin Solid Films . May2006, Vol. 504 Issue 1/2, p231-234. 4p. - Publication Year :
- 2006
-
Abstract
- Abstract: The properties for Ru/Ta and Ru/TaN bi-layer on Si substrate were investigated. The Ru, Ta and TaN films were deposited by ion beam sputtering technology and were annealed at temperatures ranging from 300 °C to 900 °C in high purity N2 ambient. The phase formation, microstructure evolution and thermal stability for the Ru/Ta/Si and Ru/TaN/Si structures were investigated. Results show that adding the Ta or TaN layer between Ru and Si delays the reaction of Ru with Si. The Ru/TaN bi-layer is more stable on Si and shows better diffusion barrier property than the Ru/Ta bi-layer. [Copyright &y& Elsevier]
- Subjects :
- *ION bombardment
*MICROSTRUCTURE
*SOLID state electronics
*MICROMECHANICS
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 504
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 20183551
- Full Text :
- https://doi.org/10.1016/j.tsf.2005.09.129